MMJT350 دیتاشیت

MMJT350

مشخصات دیتاشیت

نام دیتاشیت MMJT350
حجم فایل 118.919 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت MMJT350

دانلود دیتاشیت

سایر مستندات

MMJT350T1G 4 pages

MMJT350T1G 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MMJT350T1G
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 650mW
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 300V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
  • Package: SOT-223
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 650mW
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
  • Base Part Number: MMJT35
  • detail: Bipolar (BJT) Transistor PNP 300V 500mA 650mW Surface Mount SOT-223

محصولات مشابه